• 200-250mhz 50W PA GaN Anti Drone Module Counter Fpv Anti Fpv Anti Drone DJI Mavic Counter Fpv
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200-250mhz 50W PA GaN Anti Drone Module Counter Fpv Anti Fpv Anti Drone DJI Mavic Counter Fpv

  1. The power amplifier uses domestic core key components and can operate normally at temperatures of -10~+55°C.
  2. This document stipulates the radio frequency and monitoring technical indicators of the 200-250MHz 50W power amplifier module, the definition of each port of the module, the appearance and structure of the module, etc.
  3. This document applies to all aspects of product design, verification, production and quality inspection of the 200-250MHz 50W power amplifier module.
Working Voltage
30V
Max Output Power
47±0.5dBm
Working Efficiency
≥60%
Gain
47±1dB
Power supply requirements
≥3.7A@+30Vdc
RF Connector
SMA
Working Temperature
-10~+55℃
Size
37.3*112*19.5mm
Weight
160g
  • 200-250mhz 50W PA GaN Anti Drone Module Counter Fpv Anti Fpv Anti Drone DJI Mavic Counter Fpv
  • 200-250mhz 50W PA GaN Anti Drone Module Counter Fpv Anti Fpv Anti Drone DJI Mavic Counter Fpv
  • 200-250mhz 50W PA GaN Anti Drone Module Counter Fpv Anti Fpv Anti Drone DJI Mavic Counter Fpv
  • 200-250mhz 50W PA GaN Anti Drone Module Counter Fpv Anti Fpv Anti Drone DJI Mavic Counter Fpv
  • 200-250mhz 50W PA GaN Anti Drone Module Counter Fpv Anti Fpv Anti Drone DJI Mavic Counter Fpv
  • 200-250mhz 50W PA GaN Anti Drone Module Counter Fpv Anti Fpv Anti Drone DJI Mavic Counter Fpv
  • 200-250mhz 50W PA GaN Anti Drone Module Counter Fpv Anti Fpv Anti Drone DJI Mavic Counter Fpv
  • 200-250mhz 50W PA GaN Anti Drone Module Counter Fpv Anti Fpv Anti Drone DJI Mavic Counter Fpv
  • 200-250mhz 50W PA GaN Anti Drone Module Counter Fpv Anti Fpv Anti Drone DJI Mavic Counter Fpv

SPECIFICATION

Functional Positioning and Target Users
This 200–250MHz 50W GaN RF power amplifier module is positioned as a mid-band signal amplification unit for professional RF system integration. It is designed for engineers, system integrators, laboratory researchers, and wireless equipment developers who require stable power amplification within the VHF to low-UHF transition range. The module serves as a downstream amplification stage following signal generation equipment such as signal sources, synthesizers, or modulation boards. Typical application environments include spectrum research laboratories, custom wireless transmission systems, electromagnetic compatibility testing platforms, and experimental RF communication setups. It is supplied as a hardware module only and requires integration into a complete RF system with appropriate control, power supply, and antenna subsystems.

RF Design Structure and Core Performance Parameters
The module is built on GaN semiconductor technology, enabling high power density, improved thermal efficiency, and stable electrical performance compared with traditional silicon-based amplification solutions. It provides continuous RF output power up to 50W across the 200–250MHz frequency band with controlled gain flatness. The design incorporates impedance matching optimization, thermal management structures, and protective mechanisms for temperature and voltage stability. These design features help ensure reliable operation under continuous-duty conditions typical of laboratory testing, verification platforms, and long-cycle RF transmission experiments. Shielded RF layout design further reduces interference between internal components and external signal paths.

Engineering Value and System-Level Contribution
Within custom RF systems, a stable mid-band amplification stage is essential for accurate signal reproduction, antenna drive capability, and controlled output validation. This module enables designers to build compact, high-power RF links without relying on bulky multi-stage amplification chains. It simplifies system architecture by integrating power amplification into a single unit, reducing signal path complexity, improving overall efficiency, and lowering system losses. For research institutions and equipment developers, the module supports rapid prototyping, frequency response verification, and long-duration RF stress testing with predictable performance behavior across its operating band.


Product Advantages

High-Efficiency GaN Architecture for Thermal Stability
By using GaN transistors, the module achieves higher efficiency and lower thermal resistance than conventional RF amplifier technologies. This allows sustained 50W output with reduced heat accumulation, supporting long-duration operation in laboratory benches, rack-mounted systems, and enclosed test platforms. Improved thermal characteristics directly enhance device reliability and service life, reducing downtime and long-term maintenance requirements.

Frequency-Optimized Output for Mid-Band Applications
The 200–250MHz frequency range is precisely optimized for stable gain and impedance matching, ensuring predictable output behavior without excessive tuning. This frequency-specific design helps engineers achieve higher signal fidelity in communication experiments, antenna evaluation, and spectrum behavior analysis compared with wide-sweep broadband amplifiers that compromise low-band consistency.

Modular Mechanical Structure for Easy System Integration
The compact mechanical structure allows the module to be installed into standard RF enclosures, test racks, vehicle-mounted systems, or portable experimental platforms. Standard RF connectors and DC power interfaces simplify system wiring and support rapid replacement or upgrade. This modularity enables scalable system design, allowing engineers to expand or reconfigure RF transmission capacity without redesigning entire system frameworks.


Use Scenarios

RF Laboratory Signal Amplification and Spectrum Testing
In RF laboratories, this module is commonly used as a controlled power amplification stage for spectrum analyzer verification, antenna radiation testing, and transmission chain validation. Engineers use it to generate consistent signal strength for frequency sweep analysis, harmonic behavior evaluation, and long-term stability testing within shielded environments.

Custom Wireless System Development and Prototyping
For developers building proprietary wireless transmission systems or experimental communication links, the module provides the necessary mid-band power amplification to validate coverage range, signal integrity, and link stability. It allows designers to evaluate complete transmission chains before transitioning to mass production hardware.

Educational and Research Institutions
Universities, applied research centers, and wireless engineering training facilities use this type of module in teaching laboratories for RF system design, thermal behavior analysis, and high-power circuit verification. Its predictable output characteristics make it suitable for structured RF curriculum experiments and hardware demonstration platforms.


200-250mhz 50W PA GaN Anti Drone Module Counter Fpv Anti Fpv Anti Drone DJI Mavic Counter Fpv 

Product Introduction
The power amplifier uses domestic core key components and can operate normally at temperatures of -10~+55°C. 


This document stipulates the radio frequency and monitoring technical indicators of the 200-250MHz 50W power amplifier module, the definition of each port of the module, the appearance and structure of the module, etc.

This document applies to all aspects of product design, verification, production and quality inspection of the 200-250MHz 50W power amplifier module.

Product Parameter

Test Item

Indicator

Unit

Remark

Frequency Range

 200-250

MHz

Built-in interference source

Working Voltage

30

V

24-30V

Max Output Power

47±0.5

dBm

 400-470MHz 50W@≤3.4A

Working Efficiency

≥60

%

 

Gain

47±1

dB

peak-to-peak value

Passband Riplpe

≤2

dB

peak-to-peak value

 

High-Low Temperature Test

 


 


 

Working Temperature(℃)

-10~+55

It can start at low temperatures

Gain Stability

±1.5 @-40℃~+55℃

dB

 

Power Stability

±1.5 @-40℃~+55℃

dB

 

Power supply requirements

≥3.7A@+30Vdc;

 

Continuous wave output 50W

Power supply interface

 

 

Red + and Black -

Enable

 

 

White line

high level on,

low level off

RF Connector

SMA

 

SMA external

screw base

Size

37.3*112*19.5mm

mm

Excluding SMA

Weight

160

g


Connection Instruction




Company Introduction

Shenzhen tatusky technology Co,.LTD, specializing in the field of advanced technology. Our company is located in the vibrant city ofShenzhen, known as a hub of innovation and technology in China.

Our main products include RF module and ant FPv, which are designed with cuting-edge technology and strict quality control to meetthe diverse needs of our customers. The RF module offers high-performance and stable signal transmission, enabling seamlesscommunication in various applications. The anti FPV solution provides effectiveprotection aqamnst unauthonzed nterference anoensures the security and privacy of video transmission.

We provide ourselves on our strong R&D team, composed of experts and engineers with rich experience and professional knowledgein the field. They are constantly exploring and innovating to bring forth new and improved products that stay ahead of the markettrends.

Our manufacturing faclities are equipped with state-of-the-art machinery and adhere to interational qualty standards. This ensuresthat every product leaving our factory is of the highest quality and reliability.

FAQ

1.Why choose us?
We have professional knowledge, sincere service, patient reply, and excellent team. Can give you a comfortable buying experience

2.What is the process of placing an order?
First. you send products you like.
Second,we send information details and quotations.
Third, you can consult any guestions about our products
Fourth, confirm the order, we will send Pl, payment link.
Fifth, after the goods are packaged, we will send pictures to confirm the products, and send you the express tracking number.
Sixth, after receiving the goods, you are welcome to give us product evaluations.